1SS378 Description
TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching 1SS378 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA.
1SS378 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS378 | HIGH SWITCHING DIODE |
LGE |
1SS378 | Small Signal Schottky Barrier Diode |
TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching 1SS378 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA.