1SV311 Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.1 (typ.) Low series resistance: rs = 0.28 Ω (typ.) Useful for small size tuner Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note:.