2SC3112 Description
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current:.
- Part: 2SC3112
- Manufacturer: Toshiba (official site)
- Size: 487.09 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 2SC3113 | Silicon NPN Transistor |
| 2SC3120 | Silicon NPN Transistor |
| 2SC3121 | Silicon NPN Transistor |
| 2SC3122 | Silicon NPN Transistor |
| 2SC3123 | NPN Transistor |