2SD2012 Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation:.
- Part: 2SD2012
- Manufacturer: Toshiba (official site)
- Size: 121.20 KB
Equivalent or Similar Parts
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|---|---|---|
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2SD2012 | NPN Silicon Power Transistor |
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