2SK2987 Description
2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance.
2SK2987 Key Features
- Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 80 S (typ.)
- Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
- Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai