2SK3079 Description
2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain : PO = 33.0dBmW (Min) GP = 7.0dB (Min).
2SK3079 Key Features
- Output Power
- Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min) MAXIMUM RATINGS (Ta = 25°C) CHARACTE