SSM6L36FE Description
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance Q1 Nch: 3.0 mg (typ.) Ratings (Ta = 25 °C) (mon to the Q1, Q2) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 150 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g.