TIM5964-6UL Description
GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA.
TIM5964-6UL Key Features
- HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz
- HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE