TJ120F06J3 Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current:.
- Part: TJ120F06J3
- Manufacturer: Toshiba (official site)
- Size: 244.17 KB
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