TPC8201 Description
TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : IDSS = 10 µA (max) (VDS = 30 V).
TPC8201 Key Features
- Low drain−source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V)