TPC8A02-H Description
ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) High-speed switching. QSW ＝ 11 nC(Typ.) Low drain-source ON-resistance:.