TC2211 Datasheet | Transcom

REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs Features - - - - - - - - 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested - Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL...