Transcom TC2211
The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. For special Vp requirement, please contact factory for details.| Part No. | TC2211 |
|---|---|
| Datasheet | TC2211 Download |
| Manufacturer |  Transcom |
| Description | Plastic Packaged Low Noise PHEMT GaAs FETs |
| Buy | Stock & Price |
FEATURES
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● 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested
● Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT
DESCRIPTION
All devices are 100 % DC tested to assure consistent quality.ELECTRICAL SPECIFICATIONS
(TA=25 °C) Symbol CONDITIONS NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz Ga P1dB GL IDSS gm VP BVDGO Rth Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.6mA Drain-Gate Breakdown Voltage at IDGO = 0.15mA Thermal Resistance 9 MIN TYP 1.5 6.5 21.5 7.5 90 100 -1.0* 12 150 MAX...
