Transcom TC2998E
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal conductivity for the GaAs FET.| Part No. | TC2998E |
|---|---|
| Datasheet | TC2998E Download |
| Manufacturer |  Transcom |
| Description | GaAs Power FETs |
| Buy | Stock & Price |
FEATURES
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● 20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested
DESCRIPTION
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for military or commercial applications.ELECTRICAL SPECIFICATIONS
Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz Linear Power Gain Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz, *PSCL = 31 dBm rd MIN 2.5 42 9.5 TYP MAX 2.7 UNIT GHz dBm dB dBm % A mS Volts Volts C/W 43 10.5 52 37 18.75 13500 -1.7 22 0.6 Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level, delta frequency=5MHz.