TC2998E Datasheet | Transcom

..net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged Ga As Power FETs Features - - - - - 20 W Typical Power 10.5 d B Typical Linear Power Gain High Linearity: IP3 = 52 d Bm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal conductivity for the Ga As FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for military or mercial applications. ELECTRICAL SPECIFICATIONS Symbol FREQ P1d B GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1d B Gain pression Point, Vd = 10V, Id = 4.5A, f=2.5 - 2.7GHz Linear Power Gain Vd = 10V, Id = 4.5A, f=2.5 - 2.7GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4.5A, f=2.5 - 2.7GHz, - PSCL = 31 d Bm rd MIN 2.5 42 9.5 MAX 2.7 UNIT GHz d Bm d B d Bm % A m S Volts Volts C/W 43 10.5 52 37 18.75 13500 -1.7 22 0.6 Power Added Efficiency at 1d B pression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 m A Drain-Gate Breakdown Voltage at IDGO =15 m A Thermal Resistance - PSCL: Output Power of Single Carrier Level, delta frequency=5MHz. TRANS, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: .transinc..tw Phone: 886-6-5050086 Fax: 886-6-5051602...