Datasheet Details
| Part number | TC2998E |
|---|---|
| Manufacturer | Transcom |
| File Size | 95.11 KB |
| Description | GaAs Power FETs |
| Datasheet | TC2998E_Transcom.pdf |
|
|
Overview: ..net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.
| Part number | TC2998E |
|---|---|
| Manufacturer | Transcom |
| File Size | 95.11 KB |
| Description | GaAs Power FETs |
| Datasheet | TC2998E_Transcom.pdf |
|
|
|
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
| Part Number | Description |
|---|---|
| TC2998F | GaAs Power FETs |
| TC2996A | GaAs Power FETs |
| TC2996B | GaAs Power FETs |
| TC2996D | 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs |
| TC2997A | GaAs Power FETs |
| TC2997B | GaAs Power FETs |
| TC2997C | GaAs Power FETs |
| TC2997D | 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs |
| TC2997G | GaAs Power FETs |
| TC2181 | Low Noise and High Dynamic Range Packaged GaAs FETs |