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TC2996B Datasheet Gaas Power Fets

Manufacturer: Transcom

Overview: www.DataSheet4U.net TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power.

Datasheet Details

Part number TC2996B
Manufacturer Transcom
File Size 103.68 KB
Description GaAs Power FETs
Datasheet TC2996B_Transcom.pdf

General Description

The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 12 W Typical Power at 1.9 GHz.
  • 13 dB Typical Linear Power Gain at 1.9 GHz.
  • High Linearity: IP3 = 50 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 40 %.
  • Suitable for High Reliability.

TC2996B Distributor