Transcom TC2997C
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET.| Part No. | TC2997C |
|---|---|
| Datasheet | TC2997C Download |
| Manufacturer |  Transcom |
| Description | GaAs Power FETs |
| Buy | Stock & Price |
FEATURES
● 20 W Typical Power at 2.1 GHz● 12 dB Typical Linear Power Gain at 2.1 GHz
● High Linearity: IP3 = 52 dBm Typical
● High Power Added Efficiency: Nominal PAE of 40 %
● Suitable for High Reliability Application
● Wg = 50 mm
● 100 % DC and RF Tested PHOTO ENLARGEMENT
● Flange Ceramic Package
DESCRIPTION
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications.ELECTRICAL SPECIFICATIONS
(@ 2.1 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation, *PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 CONDITIONS Output Power at 1dB Gain Compression Point MIN 42 11 TYP 43 12 52 40 12.5 9000 -1.7 22 0.9 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W * PSCL: Output Power of Single Carrier Level.
