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TC2997C - GaAs Power FETs

General Description

The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 20 W Typical Power at 2.1 GHz.
  • 12 dB Typical Linear Power Gain at 2.1 GHz.
  • High Linearity: IP3 = 52 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 40 %.
  • Suitable for High Reliability.

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Datasheet Details

Part number TC2997C
Manufacturer Transcom
File Size 97.23 KB
Description GaAs Power FETs
Datasheet download datasheet TC2997C Datasheet

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Other Datasheets by Transcom

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TC2997A GaAs Power FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.net TC2997C PRE3_20050418 Preliminary 2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 2.1 GHz • 12 dB Typical Linear Power Gain at 2.1 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 50 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.