Datasheet4U Logo Datasheet4U.com

TC2997G Datasheet Gaas Power Fets

Manufacturer: Transcom

Overview: ..net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power.

Datasheet Details

Part number TC2997G
Manufacturer Transcom
File Size 164.02 KB
Description GaAs Power FETs
Datasheet TC2997G_Transcom.pdf

General Description

The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 16 W Typical Power at 3.5 GHz.
  • 9 dB Typical Linear Power Gain at 3.5 GHz.
  • High Linearity: IP3 = 52 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 37 %.
  • 100 % DC and RF Tested.
  • Flange Ceramic Package.
  • Suitable for WiMax and WLL.

More Datasheets from Transcom

Part Number Description
TC2997A GaAs Power FETs
TC2997B GaAs Power FETs
TC2997C GaAs Power FETs
TC2997D 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2996A GaAs Power FETs
TC2996B GaAs Power FETs
TC2996D 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
TC2998E GaAs Power FETs
TC2998F GaAs Power FETs
TC2181 Low Noise and High Dynamic Range Packaged GaAs FETs

TC2997G Distributor