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TC2997G - GaAs Power FETs

Description

The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

  • 16 W Typical Power at 3.5 GHz.
  • 9 dB Typical Linear Power Gain at 3.5 GHz.
  • High Linearity: IP3 = 52 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 37 %.
  • 100 % DC and RF Tested.
  • Flange Ceramic Package.
  • Suitable for WiMax and WLL.

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Datasheet preview – TC2997G

Datasheet Details

Part number TC2997G
Manufacturer Transcom
File Size 164.02 KB
Description GaAs Power FETs
Datasheet download datasheet TC2997G Datasheet
Additional preview pages of the TC2997G datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs FEATURES  16 W Typical Power at 3.5 GHz  9 dB Typical Linear Power Gain at 3.5 GHz  High Linearity: IP3 = 52 dBm Typical  High Power Added Efficiency: Nominal PAE of 37 %  100 % DC and RF Tested  Flange Ceramic Package  Suitable for WiMax and WLL applications PHOTO ENLARGEMENT DESCRIPTION The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications.
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