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TC2997D - 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

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Transcom

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TC2997D 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs by Transcom - Datasheet Preview — Datasheet preview – TC2997D

Datasheet Details

Part number	TC2997D
Manufacturer	Transcom
File Size	131.75 KB
Description	2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
Datasheet	TC2997D Datasheet
Additional preview pages of the TC2997D datasheet.

Product details

Description

The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

20W Typical Power at 2.45 GHz.
10dB Typical Linear Power Gain at 2.45 GHz.
High Linearity: IP3 = 52 dBm Typical.
High Power Added Efficiency: Nominal PAE of 40 %.
Suitable for High Reliability.

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Other Datasheets by Transcom

TC2997A - GaAs Power FETs
TC2997B - GaAs Power FETs
TC2997C - GaAs Power FETs
TC2997G - GaAs Power FETs
TC2996A - GaAs Power FETs
TC2996B - GaAs Power FETs

Published: Feb 3, 2009 |