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TC2997B - GaAs Power FETs

General Description

The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 20W Typical Power at 1.9 GHz.
  • 12 dB Typical Linear Power Gain at 1.9 GHz.
  • High Linearity: IP3 = 52 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 40 %.
  • Suitable for High Reliability.

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Datasheet Details

Part number TC2997B
Manufacturer Transcom
File Size 103.27 KB
Description GaAs Power FETs
Datasheet download datasheet TC2997B Datasheet

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Other Datasheets by Transcom

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TC2997A GaAs Power FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.net TC2997B REV0_20040412 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20W Typical Power at 1.9 GHz • 12 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 50 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercials applications.