Transcom TC2997B
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET.| Part No. | TC2997B |
|---|---|
| Datasheet | TC2997B Download |
| Manufacturer |  Transcom |
| Description | GaAs Power FETs |
| Buy | Stock & Price |
FEATURES
● 20W Typical Power at 1.9 GHz● 12 dB Typical Linear Power Gain at 1.9 GHz
● High Linearity: IP3 = 52 dBm Typical
● High Power Added Efficiency: Nominal PAE of 40 %
● Suitable for High Reliability Application
● Lg = 1 µm, Wg = 50 mm
● 100 % DC and RF Tested PHOTO ENLARGEMENT
● Flange Ceramic Package
DESCRIPTION
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercials applications.ELECTRICAL SPECIFICATIONS
( @ 1.9 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10.5 V, IDS = 5A Linear Power Gain VDS = 10.5 V, IDS = 5A Intercept Point of the 3rd-order Intermodulation VDS = 10.5 V, IDS = 5A, *PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =...
