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TC2997B - GaAs Power FETs

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Transcom

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TC2997B GaAs Power FETs by Transcom - Datasheet Preview — Datasheet preview – TC2997B

Datasheet Details

Part number	TC2997B
Manufacturer	Transcom
File Size	103.27 KB
Description	GaAs Power FETs
Datasheet	TC2997B Datasheet
Additional preview pages of the TC2997B datasheet.

Product details

Description

The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

20W Typical Power at 1.9 GHz.
12 dB Typical Linear Power Gain at 1.9 GHz.
High Linearity: IP3 = 52 dBm Typical.
High Power Added Efficiency: Nominal PAE of 40 %.
Suitable for High Reliability.

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Other Datasheets by Transcom

TC2997A - GaAs Power FETs
TC2997C - GaAs Power FETs
TC2997D - 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2997G - GaAs Power FETs
TC2996A - GaAs Power FETs
TC2996B - GaAs Power FETs

Published: Aug 22, 2011 |