TC2997B
TC2997B is GaAs Power FETs manufactured by Transcom.
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REV0_20040412
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
Features
- 20W Typical Power at 1.9 GHz
- 12 dB Typical Linear Power Gain at 1.9 GHz
- High Linearity: IP3 = 52 dBm Typical
- High Power Added Efficiency: Nominal PAE of 40 %
- Suitable for High Reliability Application
- Lg = 1 µm, Wg = 50 mm
- 100 % DC and RF Tested
PHOTO ENLARGEMENT
- Flange Ceramic Package
DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent...
