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TC2996A - GaAs Power FETs

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Transcom

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TC2996A GaAs Power FETs by Transcom - Datasheet Preview — Datasheet preview – TC2996A

Datasheet Details

Part number	TC2996A
Manufacturer	Transcom
File Size	100.43 KB
Description	GaAs Power FETs
Datasheet	TC2996A Datasheet
Additional preview pages of the TC2996A datasheet.

Product details

Description

The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

12 W Typical Power at 1.6 GHz.
13 dB Typical Linear Power Gain at 1.6 GHz.
High Linearity:IP3 = 50 dBm Typical.
High Power Added Efficiency:Nominal PAE of 40 %.
Suitable for High Reliability.

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Other Datasheets by Transcom

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Published: Aug 22, 2011 |