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BAV99T - SWITCHING DIODE

Download the BAV99T datasheet PDF. This datasheet also covers the BAV70T variant, as both devices belong to the same switching diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BAV70T-Transys.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BAV99T
Manufacturer Transys
File Size 70.88 KB
Description SWITCHING DIODE
Datasheet download datasheet BAV99T Datasheet

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Other Datasheets by Transys

Part Number Description
BAV70T SWITCHING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR1 IR2 VF CD t rr Test conditions IR= 100µA VR=75V VR=25V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz MIN MAX 85 2 0.03 715 855 1000 1250 1.