BAV70T - SWITCHING DIODE

Transys

Key Features

Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE.

BAV70T switching diode by Transys - Datasheet Preview

Datasheet Details

Part number	BAV70T
Manufacturer	Transys
File Size	70.88 KB
Description	SWITCHING DIODE
Datasheet	BAV70T Datasheet

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Other Datasheets by Transys

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BAV99T	SWITCHING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR1 IR2 VF CD t rr Test conditions IR= 100µA VR=75V VR=25V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz MIN MAX 85 2 0.03 715 855 1000 1250 1.