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TGA1135B - 18-27.5 GHz 1W Power Amplifier

Key Features

  • 0.25 um pHEMT Technology.
  • 14 dB Nominal Gain at 23GHz.
  • 30 dBm Nominal P1dB.
  • 38dBm OTOI typical.
  • Typical 15dB Input/Output RL.
  • Bias 6 - 7V @ 540 mA.
  • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary.

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Datasheet Details

Part number TGA1135B
Manufacturer TriQuint Semiconductor
File Size 1.37 MB
Description 18-27.5 GHz 1W Power Amplifier
Datasheet download datasheet TGA1135B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB (dBm) 30 29.5 29 28.5 28 27.