TGA1135B Datasheet | TriQuint Semiconductor

Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier Key Features - 0.25 um pHEMT Technology - 14 dB Nominal Gain at 23GHz - 30 dBm Nominal P1dB - 38dBm OTOI typical - Typical 15dB Input/Output RL - Bias 6 - 7V @ 540 mA - On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications - Point-to-Point Radio - Point-to-Multipoint munications - Ka Band Sat- TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB...