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TGA1141 - 33-36 GHz 2W Power Amplifier

General Description

Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom.

36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min.

35.2 GHz 31.5dBm min, 34

35.2 GHz over temp.

Key Features

  • 0.25 um pHEMT Technology.
  • 17 dB Nominal Gain.
  • 31 dBm Pout @ P1dB,.
  • Psat 33dBm @ 6V , 34dBm @7V.
  • Bias 6 - 7V @ 1.5A Primary.

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Datasheet Details

Part number TGA1141
Manufacturer TriQuint Semiconductor
File Size 518.12 KB
Description 33-36 GHz 2W Power Amplifier
Datasheet download datasheet TGA1141 Datasheet

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Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems • Ka Band Sat-Com • Point-to-Point Radio Chip Dimensions 4.13 mm x 3.3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 18 Performance Summary Table Description Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom. 33 – 36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min. 34 –35.2 GHz 31.5dBm min, 34 – 35.2 GHz over temp. > 20% +25C Tested under –26, +25, & +100C Predict: -43C < 1.