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TGA1172 - 27 - 32 GHz 1W Power Amplifier

Key Features

  • 0.25 um pHEMT Technology.
  • 18 dB Gain at 28 GHz.
  • 29 dBm Nominal P1dB.
  • 37dBm OTOI typical at 28GHz.
  • Input/Output RL < -10 dB.
  • Bias 6 - 7V @ 630 mA Chip Dimensions 2.69 mm x 1.37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Primary.

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Datasheet Details

Part number TGA1172
Manufacturer TriQuint Semiconductor
File Size 768.54 KB
Description 27 - 32 GHz 1W Power Amplifier
Datasheet download datasheet TGA1172 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA Chip Dimensions 2.69 mm x 1.