TGF4112-EPU
TGF4112-EPU is 12 mm Discrete HFET manufactured by TriQuint Semiconductor.
12 mm Discrete HFET
4112
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- 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 d B at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4112-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and T A = 25°C
46 Pout 44 42 40 38 36 34 32 30 28 26 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 PAE
55 50 45 40 35 30 25 20 15 10 5
Input Power (d Bm)
1 Tri Quint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: .triquint.
Power Added Efficiency %
Output Power (d Bm)
TGF4112-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 0.9 A (Vg = -1.1 V), 0.72 A (Vg = -1.3 V), and 0.61 A (Vg = -1.5 V)
140 130 Predicted Channel Temp (°C) 120 110 100 90 80 70 60 50 40 30
60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 10 5 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V
38 37 36 Output Power (d Bm)
35 34 33 Tch 32 31 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 30 29 28 27
14 13 Gain (d B) 12 11 10 9 8 14 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 16 17 18 19 20 21 22 23 Input Power (d Bm) 24 25 26 27 28
Tri Quint Semiconductor Texas Phone: 972 994-8465
Fax 972 994-8504
Web: .triquint.
TGF4112-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 0.92 A (Vg = -1.1 V), 0.75 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V)
140 130 Predicted Channel Temp (°C) 120 110 100 90 80 70 60 50 40 30
60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 10 5 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V
38 37 36 Output Power (d Bm)
35 34 Tch 33 32 31 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 30 29 28 27
14 13 Gain (d B) 12 11 10 9 8 14 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 15 16 17 18 19 20 21 22 23 Input Power (d Bm) 24 25 26 27 28
Tri Quint Semiconductor Texas Phone: 972 994-8465
Fax 972 994-8504
Web:...
