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TGF4118-EPU
18 mm Discrete HFET
4118
• • • • •
0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4118-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and T A = 25°C
50 Pout 48 46 PAE 50 45 44 42 40 38 36 25 34 32 30 20 22 24 26 28 30 32 20 15 40 35 30 55
Input Power (dBm)
Power Added Efficiency %
1
TriQuint Semiconductor Texas Phone: 972 994-8465
Output Power (dBm)
Fax 972 994-8504
Web: www.triquint.com
TGF4118-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.
TGF4118-EPU Datasheet
