TQHBT3 Datasheet | TriQuint Semiconductor

Features Metal 2 - 4um - - - - - MIM Metal 0 Isolation Implant Dielectric Metal 1 - 2um Dielectric Emitter Metal 1 - 2um .. Ni Cr Base Collector - - - Sub Collector Buffer & Substrate - TQHBT3 Process Cross-Section - General Description Tri Quint’s new TQHBT3 process is a highly reliable In Ga P HBT process with three levels of interconnecting metal and state-of-the-art device performance. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and In Ga P Emitter are utilized for high RF performance consistent with high reliability. Designs utilizing the 3-um emitter width have the performance of previous 2-um emitters, but with the reliability and ruggedness associated with wider emitters. Precision Ni Cr resistors and high value MIM capacitors are included. The three metal layers are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity. - - - - - - 2- and 3-um emitter widths >22 d B MAG @ 6 GHz; with 3-um emitters Amplifier Ruggedness: VSWR 70:1 @ 5 V supply High Linearity in PA applications In Ga P Emitter Process for High Reliability and Thermal Stability Base Etch Stop for Uniformity MOCVD Epitaxy High Density Interconnects; - 2 Global, 1 Local - Over 6 µm Total Thickness - Dielectric Encapsulated Metals Thick Metal Interconnects: - Enhanced Thermal Management - Minimum Die Size Effective Base Ballasting for Maximum Gain 150 mm Wafers High-Q Passives Ni Cr Thin Film Resistors High Value Capacitors & Stacked Capacitors Backside Vias Optional Validated Models and Design Support Applications - - - Power Amplifiers Driver Amplifiers Wideband, General Purpose Amplifiers Tri Quint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for...