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TQHBT3 - InGaP HBT Foundry Service

Description

TriQuint’s new TQHBT3 process is a highly reliable InGaP HBT process with three levels of interconnecting metal and state-of-the-art device performance.

Thick metal interconnects and high quality passives promote integration.

Features

  • Metal 2 - 4um TQHBT3.
  • MIM Metal 0 Isolation Implant Dielectric Metal 1 - 2um Dielectric E Emitter Metal 1 - 2um www. DataSheet4U. com B C B C NiCr Base Collector.
  • Sub Collector Buffer & Substrate.
  • TQHBT3 Process Cross-Section.
  • General.

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Datasheet Details

Part number TQHBT3
Manufacturer TriQuint Semiconductor
File Size 148.94 KB
Description InGaP HBT Foundry Service
Datasheet download datasheet TQHBT3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production Process InGaP HBT Foundry Service Features Metal 2 - 4um TQHBT3 • • • • • MIM Metal 0 Isolation Implant Dielectric Metal 1 - 2um Dielectric E Emitter Metal 1 - 2um www.DataSheet4U.com B C B C NiCr Base Collector • • • Sub Collector Buffer & Substrate • TQHBT3 Process Cross-Section • General Description TriQuint’s new TQHBT3 process is a highly reliable InGaP HBT process with three levels of interconnecting metal and state-of-the-art device performance. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers.
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