Datasheet Details
| Part number | TSA20N50M |
|---|---|
| Manufacturer | Truesemi |
| File Size | 722.81 KB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 TSA20N50M Datasheet
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General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D.
- ◀ G { G D S ▲.
- {S TO-3P or TO247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL TC = 25°Cunless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - P.