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TSA20N60S - N-Channel MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.16Ω.
  • Ultra Low Gate Charge (typ. Qg = 63nC).
  • 100% avalanche tested.
  • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current.

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Datasheet Details

Part number TSA20N60S
Manufacturer Truesemi
File Size 943.23 KB
Description N-Channel MOSFET
Datasheet download datasheet TSA20N60S Datasheet

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Full PDF Text Transcription (Reference)

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TSA20N60S, TSK20N60S 600V N-Channel MOSFET TSA20N60S, TSK20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low Gate Charge (typ.