Datasheet Summary
TSA20N60S, TSK20N60S 600V N-Channel MOSFET
TSA20N60S, TSK20N60S 600V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency.
Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.16Ω
- Ultra Low Gate Charge (typ. Qg = 63nC)
- 100% avalanche tested
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