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TSA9N90MZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 9.0A, 900V, RDS(on) = 1.4 @VGS = 10 V.
  • Low gate charge ( typical 45nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • ESD improved capability GD S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy.

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Datasheet Details

Part number TSA9N90MZ
Manufacturer Truesemi
File Size 266.40 KB
Description N-Channel MOSFET
Datasheet download datasheet TSA9N90MZ Datasheet
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Full PDF Text Transcription

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TSA9N90MZ 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 9.0A, 900V, RDS(on) = 1.
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