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TSB4N60M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Puls.

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Datasheet Details

Part number TSB4N60M
Manufacturer Truesemi
File Size 228.67 KB
Description N-Channel MOSFET
Datasheet download datasheet TSB4N60M Datasheet
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Full PDF Text Transcription

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TSB4N60M / TSI4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 4.0A, 600V, RDS(on) = 2.
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