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TSD60R380S1 - N-Channel MOSFET

General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.34Ω.
  • Ultra Low gate charge (typ. Qg = 38nC).
  • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanc.

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Datasheet Details

Part number TSD60R380S1
Manufacturer Truesemi
File Size 579.80 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD60R380S1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD60R380S1 600V 10.6A N-Channel SJ-MOSFET TSD60R380S1 600V 10.6A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.34Ω • Ultra Low gate charge (typ.