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TSD60R650S1 - N-Channel MOSFET

Key Features

  • Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
  • 650V @TJ = 150 ℃.

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Datasheet Details

Part number TSD60R650S1
Manufacturer Truesemi
File Size 768.47 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD60R650S1 Datasheet

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Full PDF Text Transcription (Reference)

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TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.58Ω • Ultra Low gate charge (typ.