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TSD60R580WT - N-Channel MOSFET

Key Features

  • Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
  • 600V @TJ = 25 ℃.

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Datasheet Details

Part number TSD60R580WT
Manufacturer Truesemi
File Size 421.93 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD60R580WT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 600V @TJ = 25 ℃ • Typ. RDS(on) = 0.5Ω • Ultra Low gate charge (typ. Qg = 14.