Datasheet4U Logo Datasheet4U.com

TSI7N80M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sing.

📥 Download Datasheet

Datasheet preview – TSI7N80M

Datasheet Details

Part number TSI7N80M
Manufacturer Truesemi
File Size 263.77 KB
Description N-Channel MOSFET
Datasheet download datasheet TSI7N80M Datasheet
Additional preview pages of the TSI7N80M datasheet.

📁 Similar Datasheet

Other Datasheets by Truesemi

Full PDF Text Transcription

Click to expand full text
TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.0A, 800V, RDS(on) = 1.
Published: |