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TSP640 - 200V N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics.

Features

  • 18A,200v,RDS(on)=0.18Ω@VGS=10V.
  • Gate charge (Typical 44nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability General.

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Datasheet preview – TSP640

Datasheet Details

Part number TSP640
Manufacturer Truesemi
File Size 585.65 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet TSP640 Datasheet
Additional preview pages of the TSP640 datasheet.

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Full PDF Text Transcription

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TSP640 200V N-Channel MOSFET Features ■ 18A,200v,RDS(on)=0.18Ω@VGS=10V ■ Gate charge (Typical 44nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
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