TSP640 Datasheet | Truesemi

Features - 18A,200v,RDS(on)=0.18Ω@VGS=10V - Gate charge (Typical 44n C) - High ruggedness - Fast switching - 100% Avalanche Tested - Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol VDSS IDM VGS EAS EAR dv/dt TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power...