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TSP640M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 18.0A, 200V, RDS(on) = 0.18Ω @VGS = 10 V.
  • Low gate charge ( typical 40nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

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Datasheet preview – TSP640M

Datasheet Details

Part number TSP640M
Manufacturer Truesemi
File Size 258.61 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP640M Datasheet
Additional preview pages of the TSP640M datasheet.

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Full PDF Text Transcription

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TSP640M / TSF640M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 18.0A, 200V, RDS(on) = 0.
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