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TSP7N60M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 7.0A,600V,Max. RDS(on)=1.3Ω @ VGS =10V.
  • Low gate charge(typical 29nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanch.

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Datasheet Details

Part number TSP7N60M
Manufacturer Truesemi
File Size 802.53 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP7N60M Datasheet
Additional preview pages of the TSP7N60M datasheet.

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Full PDF Text Transcription

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TSP7N60M/TSF7N60M TSP7N60M/TSF7N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7.0A,600V,Max.RDS(on)=1.
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