TSP7N80M
TSP7N80M is N-Channel MOSFET manufactured by Truesemi.
Description
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V
- Low gate charge ( typical 40n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source...
