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TSP7N60S - N-Channel MOSFET

Datasheet Summary

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.58Ω.
  • Ultra Low Gate Charge (typ. Qg = 9nC).
  • 100% avalanche tested.
  • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (N.

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Datasheet Details

Part number TSP7N60S
Manufacturer Truesemi
File Size 804.55 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP7N60S Datasheet
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TSP7N60S/ TSF7N60S600V N-Channel MOSFET TSP7N60S/ TSF7N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.58Ω • Ultra Low Gate Charge (typ.
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