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4407 - P-Channel MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Lead free product is acquired.
  • SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC Parameter IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC IS Maximum Diode Forward Current.

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Datasheet Details

Part number 4407
Manufacturer Tuofeng Semiconductor
File Size 158.64 KB
Description P-Channel MOSFET
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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4407 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A -30V -12A 20 @ VGS = -10V ,ID=-10A 28 @ VGS = -5V ,ID=-10A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC Parameter IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.
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