VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30 0.030 @ VGS = −4.5 V ID (A) −8.0 −5.0 FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant APPLICATIONS D Load Switches D Battery Switch Available SO-8 S1 S2 S3 G4 Top View Ordering Information: 4435 8D 7D 6D 5D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS −30 VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −8.
4435 Datasheet
