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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3906LT1 TRANSISTOR ( PNP)
FEATURES
·As complementary type, the NPN transistor
MMBT3904LT1 is Recommended
·Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
Value -40 -40 -5 -0.2 0.
MMBT3906LT1 Datasheet
