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MMBT5401LT1 - PNP Transistor

Key Features

  • Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2.

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Datasheet Details

Part number MMBT5401LT1
Manufacturer Tuofeng Semiconductor
File Size 98.70 KB
Description PNP Transistor
Datasheet download datasheet MMBT5401LT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR - 2. 4 1. 3 Unit: mm 0.