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TF2300 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11.. BGasae te 22.ESmoituterrce 33.. cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous.
  • TJ=125 -Pulsed Power Dissipation.
  • Thermal Resistan.

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Datasheet Details

Part number TF2300
Manufacturer Tuofeng Semiconductor
File Size 633.67 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet TF2300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT N-Channel Enhancement Mode Field Effect Transistor TF2300 Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range * Surface Mounted on FR 4 Board ,t 10 sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 10 6.