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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2302 N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = 4.5 V 20
0.090 @ V GS = 2.5 V
ID (A)
3.0 2.0
(SOT-23-3L) (SOT-23)
G1 S2
3D
Top View TF2302 (A2sHB )*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
20 "8
Continuous Drain Current (TJ = 150_C)b
TA= 25_C
ID
3.0
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b
IDM 10 IS 1.6
Power Dissipationb
TA= 25_C
PD
1.25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes a.