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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2302A N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.040 @ VGS = 4.5 V 20
0.060 @ V GS = 2.5 V
ID (A)
3.0 2.0
(SOT-23)
G1 S2
3D
Top View TF2302A (A2)*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
20 "8
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
IDM IS
PD
TJ, Tstg
10 1.6 1.25
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c.