Datasheet4U Logo Datasheet4U.com

DU2812OV - RF MOSFET Power Transistor

Features

  • l l l l l DU2812OV N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C Electrical Characteristics Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C Symbol BV,,, ’05s ‘GSS V GSfW GM C ISS C oss C Rss GP ‘1D 5 13 60 10 2.0 3.0 Min 65 Max 6.0 6.0 6.0 270 240 48 - Units V mA pA V S pF pF PF dB % % V,,=O. O V, l,s=30.0 mA’.

📥 Download Datasheet

Datasheet preview – DU2812OV

Datasheet Details

Part number DU2812OV
Manufacturer Tyco Electronics
File Size 197.80 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU2812OV Datasheet
Additional preview pages of the DU2812OV datasheet.
Other Datasheets by Tyco Electronics

Full PDF Text Transcription

Click to expand full text
RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz Features l l l l l DU2812OV N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices .. Absolute Maximum Ratings at 25°C Electrical Characteristics Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C Symbol BV,,, ’05s ‘GSS V GSfW GM C ISS C oss C Rss GP ‘1D 5 13 60 10 2.0 3.0 Min 65 Max 6.0 6.0 6.0 270 240 48 - Units V mA pA V S pF pF PF dB % % V,,=O.O V, l,s=30.0 mA’ V,,=28.0 v,,=20.0 V,,=lO.O V,,=lO.O V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 v, v,,=o.o v, v,,=o.
Published: |