DU2820
DU2820 is RF MOSFET Power Transistor manufactured by Tyco Electronics.
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
DU2820S
Absolute Maximum Ratings at 25°C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p r J TJ T STG 6JC 1 Rating 65 20 24 62.5 200 -55 to +150 2.8 t Units V V A W “C “C “Cl-W 1
4.55 7.39
[ I
X59 .259
1 I
.l79 291 I
1 6.58
1 .I0
1 x5
Jo6
Electrical Characteristics I
Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltaae Leakage Current Leakage Current at 25°C
Symbol BV..,, ‘ass ‘GSS V 0sr-v GM C 15s C OS5 C RSS GP ‘70 VSWR-T 13 60 2.0 500 Min 65 Max 1.0 1.0 6.0 45 40 a 3O:l Units V m A fl V m S p F p F PF d B % V,.=O.O V, I,,=50 v,,=28.0 v, v,,=o.o m A v v Test Conditions v Gs=20.0 v. v,,=o.o
Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance
Specifications
VDs=l 0.0 V, IDS=1 00.0 m A V&O.0 v,,=28.0 V,,=28.0 V,,=28.0 V, 1,,=100.0 m A, AV,,=l v, F=l .o MHZ V, F=l .O MHz V, F=l .O MHz m A, P,,f20 W, F=175 MHz MHz MHz .O V, 80 ps Pulse v D,=2a.o V, I,,=100 v,,=28.0 v,,=28.0 v, I,,=100 m A, PO,=20 W, F=l75
V. I,,=1 00 m A, P,,1=;20 W, F=l75
Subject to Change Without Notice.
M/A-, Inc.
North America: Tel. Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax t81 +81 (03) (03) 3226-1671 3226-1451 n
Europe:
Tel. Fax
+44 (1344) +44 (1344)
869 595 300 020
RF MOSFET Power Transistor,
2OW, 28V
DU2820S v2.00
Typical Broadband Performance
Curves...
