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DU2820S
RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 24 62.5 200 -55 to +150 2.8
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 17.5 - j13.0
ZLOAD (Ω) 16.0 - j2.5
50
15.0 - j15.5
15.0 - j4.0
100
8.0 - j14.0
12.0 - j6.0
200
5.5 - j8.0
9.25 - j6.
DU2820S Datasheet
